vapor phase growth
英 [ˈveɪpə(r) feɪz ɡrəʊθ]
美 [ˈveɪpər feɪz ɡroʊθ]
网络 气相生长; 汽相生长
双语例句
- Single Crystal Tungsten Micron-/ Nano-sized Whiskers: Vapor Phase Synthesis, Growth Mechanism, Properties and Application
单晶钨微/纳米晶须：气相合成、生长机理、性能测试和应用前景 - A p~+-n_1-n_2-n~ (++) Multilayer Vapor Phase Epitaxial Growth Technique for GaAs IMPATT Diodes
用于GaAsIMPATT二极管的p~+-n1-n2-n~（++）多层汽相外延生长 - Vapor Phase Growth of MCT Epitaxial Layers
碲镉汞外延层的汽相生长 - An almost freely sustained new iron film system deposited on a silicone oil surface by vapor phase deposition has been fabricated, and its growth mechanism, internal stress patterns and low temperature magnetic properties have been studied.
采用气相沉积方法在硅油基底表面成功制备了一种具有近似自由支撑的新型铁薄膜系统，并研究了其生长机制、内应力分布以及低温磁特性。 - Phase Equilibrium of CdSe Crystals in Vapor-phase Growth
CdSe单晶体气相生长过程中的相平衡 - Hydride Vapor Phase Epitaxy ( HVPE) is a promising growth method for obtaining a GaN substrate. In this paper we have introduced the electrical, optical properties of GaN material and its important use.
氢化物气相外延（HVPE）是制备氮化镓（GaN）衬底最有希望的方法。 - A Method for Vapor Phase Epitaxial Growth of Multilayer InP
一种汽相生长多层外延InP的方法 - The vapor phase growth of carbon fiber is a new technology advanced recently.
气相生长碳纤维是近年来兴起的一项新技术。 - Vapor phase nucleation ( VPN) growth mechanism was proposed to explain the growth of carbon nanotubes in floating catalyst system.
提出了气相形核生长（VPN）机理解释浮动催化体系中碳纳米管的生长过程。 - Vapor phase epitaxy growth of gaas_ ( 1-x) p_x: n/ gap by the ammonia doping arsenic vapor pressure method
加氨砷压法气相外延生长GaAs（1-x）Px：N/GaP - Using the microwave plasma-enhanced chemical vapor phase deposition, in the gas mixture of the methane and hydrogen, the aligned growth of the carbon nanotubes was observed and analyzed with a scanning electron microscope.
利用微波等离子体增强化学气相沉积法在氢气和甲烷的混合气体中定向生长纳米碳管。 - In this paper, a vapor phase growth technique of PN/ N+ multilayer submicron epitaxial material for 3 mm waveband Si DDR IMPATT diodes is pre-sented. The approaches to obtain these high quality multilayer structures are studied. The optimum epitaxial process conditions have been established.
报导了3mm波段硅双漂移崩越二极管所需PN/N~+多层、亚微米外延材料的常规CVD生长技术，研究了实现这些高要求的多层结构的方法，得到了最佳的外延工艺条件。 - Horizontal vapor phase growth ( hvpg) of pb_ ( 1-x) sn_x te single crystals
碲锡铅单晶的水平汽相生长 - Hydride Vapor Phase Epitaxy ( HVPE) method has been widely used for its industrial production because of the high growth rate.
氢化物气相外延（HVPE）方法因其超高的生长速率成为目前工业化生产优先选择的生长方法。